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| TCDT1110(G) Vishay Telefunken Optocoupler with Phototransistor Output Description The TCDT1110(G) consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I - IV at mains voltage 300 V D For appl. class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. nc 6 C 5 E 4 VDE Standards These couplers perform safety functions according to the following equipment standards: 94 9222 D VDE 0884 Optocoupler for electrical safety requirements 1 A (+) 2 C (-) 3 nc D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 VRMS) D VDE 0804 Telecommunication processing apparatus and data D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking TCDT1110/ TCDT1110G1) > 100% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 216 Rev. A3, 11-Jan-99 TCDT1110(G) Vishay Telefunken Features Approvals: D Rated recurring peak voltage (repetitive) D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm General features: VIORM = 600 VRMS D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D VDE 0884, Certificate number 94778 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Base not connected D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 3 100 125 Unit V mA A mW C tp/T 10 ms Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 -55 to +100 -55 to +125 260 Unit kV mw C C C 2 mm from case, t 10 s Rev. A3, 11-Jan-99 217 TCDT1110(G) Vishay Telefunken Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.2 50 Max. 1.5 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 30 V, IF = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. Unit V V nA 150 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 0.5 mA VCE = 5 V, IF = 10 mA, RL = 1 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 110 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 20 V, IF = 10 mA Type TCDT1110(G) Symbol CTR Min. 1 Typ. Max. Unit 218 Rev. A3, 11-Jan-99 TCDT1110(G) Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV C Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage - 100%, ttest = 1 s Routine test Partial discharge test voltage - tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100C VIO = 500 V, Tamb = 200C (construction test only) 300 Psi 250 200 VPd (mW) Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W VIOTM V t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s 150 100 Isi (mA) 50 0 0 95 10934 VIOWM VIORM 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 25 50 75 100 125 150 175 200 Tamb ( C ) 13930 Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A3, 11-Jan-99 219 TCDT1110(G) Vishay Telefunken Switching Characteristics Parameter Turn-off time Turn-on time Turn-off time Turn-on time Test Conditions VS = 10 V, IC = 2 mA, RL = 100 W ( (see figure 3) g ) VS = 10 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g ) Symbol toff ton toff ton Typ. 15.0 15.0 18.0 9.0 Unit ms ms ms ms 0 IF IF + 10 V IC = 2 mA ; Adjusted through input amplitude IF 0 tp IC Oscilloscope RL CL 96 11698 RG = 50 W tp = 0.01 T tp = 50 ms t Channel I 100 W Channel II 50W 95 10889 w1M W v 20 pF 100% 90% Figure 3. Test circuit, non-saturated operation 10% 0 tr td ton tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time ts toff ts tf toff (= ts + tf) storage time fall time turn-off time tf t 0 IF IF = 10 mA + 10 V IC RG = 50 W tp = 0.01 T tp = 50 ms Channel I Channel II 1 kW Oscilloscope RL CL Figure 5. Switching times 50 W 95 10898 w 1 MW v 20 pF Figure 4. Test circuit, saturated operation 220 Rev. A3, 11-Jan-99 TCDT1110(G) Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=30V IF=0 1000 100 10 1 40 80 120 95 11072 0 25 50 75 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 6. Total Power Dissipation vs. Ambient Temperature 1000.0 Figure 9. Collector Dark Current vs. Ambient Temperature 100.00 VCE=10V I F - Forward Current ( mA ) 100.0 IC - Collector Current ( mA ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 10.00 10.0 1.00 1.0 0.10 0.1 96 11862 0.01 0.1 96 11904 1.0 10.0 100.0 IF - Forward Current ( mA ) Figure 7. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature ( C ) Figure 10. Collector Current vs. Forward Current 100 IC - Collector Current ( mA ) VCE=10V IF=10mA 20mA IF=50mA 10 10mA 5mA 2mA 1mA 0.1 0.1 95 10985 1 1 10 100 96 11874 VCE - Collector Emitter Voltage ( V ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Figure 11. Collector Current vs. Collector Emitter Voltage Rev. A3, 11-Jan-99 221 TCDT1110(G) Vishay Telefunken V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 50 Saturated Operation VS=5V RL=1kW 0.8 20% 0.6 CTR=50% 0.4 0.2 10% 0 1 10 IC - Collector Current ( mA ) 100 t on / t off - Turn on / Turn off Time ( m s ) 40 30 toff 20 10 0 0 5 10 15 ton 20 95 10972 95 10974 IF - Forward Current ( mA ) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1000 CTR - Current Transfer Ratio ( % ) VCE=20V Figure 15. Turn on / off Time vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 20 Non Saturated Operation VS=10V RL=100W toff 10 ton 5 15 100 10 1 0.1 95 10976 0 1 10 100 95 10975 0 2 4 6 8 10 IF - Forward Current ( mA ) IC - Collector Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current Type Figure 16. Turn on / off Time vs. Collector Current Date Code (YM) XXXXXX 918 A TK 63 0884 V DE 15090 Production Location Safety Logo Coupling System Indicator Company Logo Figure 14. Marking example 222 Rev. A3, 11-Jan-99 TCDT1110(G) Vishay Telefunken Dimensions of TCDT1110G in mm weight: ca. 0.50 g creepage distance: 8 mm air path: 8 mm after mounting on PC board 14771 y y Dimensions of TCDT1110 in mm weight: 0.50 g creepage distance: 6 mm air path: 6 mm after mounting on PC board y y 14770 Rev. A3, 11-Jan-99 223 |
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